Preprint 1996-034

The Energy Transport and the Drift Diffusion Equations as Relaxation Limits of the Hydrodynamic Model for Semiconductors

Ingenuin Gasser and Roberto Natalini

Abstract: Two relaxation limits of the hydrodynamic model for semiconductors are investigated. Using the compensated compactness tools we show the convergence of (scaled) entropy solutions of the hydrodynamic model to the solutions of the energy transport and the drift--diffusion equations, according respectively to different time scales.

Paper:
Available as PostScript
Title:
The Energy Transport and the Drift Diffusion Equations as Relaxation Limits of the Hydrodynamic Model for Semiconductors
Author(s):
Ingenuin Gasser, mailto:gasser@math.tu-berlin.de
Roberto Natalini, mailto:natalini@asterix.iac.rm.cnr.it
Publishing information:
Quaderno IAC n. 20, 1996
Submitted by:
mailto:natalini@asterix.iac.rm.cnr.it September 23 1996.


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